Перегляд за автором "Litovchenko, V.G."

Сортувати за: Порядок: Результатів:

  • Activation of porous Si blue emission due to preanodization ion implantation 
    Rozhin, A.G.; Klyui, N.I.; Litovchenko, V.G.; Melnik, V.P.; Romanyuk, B.N.; Piryatinskii, Yu.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Implantation of B⁺, N⁺, and B⁺+N⁺ ions into initial silicon wafers was carried out before anodization process. The results of photoluminescent (PL) study of porous Si samples prepared on B⁺ or N⁺ implanted wafers show a ...
  • Analysis of the fundamental characteristics of diamond-like crystals and low-dimensional structures 
    Litovchenko, V.G. (Condensed Matter Physics, 2004)
    The principle has been developed for systematizing the diamond-like crystals with tetrahedral structure of the elementary cells and with valence chemical bonds, based on the calculation of the lattice constant. The approach ...
  • Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films 
    Lisovskyy, I.P.; Litovchenko, V.G.; Zlobin, S.O.; Voitovych, M.V.; Khatsevich, I.M.; Indutnyy, I.Z.; Shepeliavyi, P.E.; Kolomys, O.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The effect of low-temperature annealing on light emitting properties of naSi/SiOx porous column-like nanocomposite films has been studied. Influence of type of chemically active gas or inert ambient on PL characteristics ...
  • Electron field emission from SiOx films 
    Evtukh, А.А.; Indutnyy, I.Z.; Lisovskyy, I.P.; Litvin, Yu.M.; Litovchenko, V.G.; Lytvyn, P.M.; Mazunov, D.O.; Rassamakin, Yu.V.; Shepeliavyi, P.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Efficient electron field emission from silicon flat cathode coated with SiOx film (x 0.3-0.5) was observed both before and after thermal (1000 °C) annealing with subsequent etching in HF solution. Oxide films were produced ...
  • Electron-hole Fermi liquid in nanosized semiconductor structures 
    Litovchenko, V.G.; Grygoriev, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The experimental and theoretical results on the quantum-sized electron-hole liquid plasma (EHLP) in semiconductors and analysis of the difference of it in comparison to the bulk one have been presented. The non-equilibrium ...
  • Field emission of electrons from laser produced silicon tip arrays 
    Evtukh, A.A.; Kaganovich, E.B.; Litovchenko, V.G.; Litvin, Yu.M.; Fedin, D.V.; Manoilov, E.G.; Svechnikov, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The new preparation method of silicon tips with nanocomposite structure, namely laser modification of silicon is developed. The laser direct-write process has been applied, one by one (single) laser pulses formed the single ...
  • Formation of silicon nanoclusters in buried ultra-thin oxide layers 
    Oberemok, O.S.; Litovchenko, V.G.; Gamov, D.V.; Popov, V.G.; Melnik, V.P.; Gudymenko, O.Yo.; Nikirin, V.A.; Khatsevich, І.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The peculiarities of buried layer formation obtained by co-implantation of O2 ions with the energy of 130 keV and carbon ions within the energy range of 30-50 keV have been investigated. The corresponding ion doses for ...
  • High efficient solar cells and modules based on diamond-like carbon film - multicrystalline Si structures 
    Klyui, N.I.; Korneta, O.B.; Kostylyov, V.P.; Litovchenko, V.G.; Makarov, A.V.; Dikusha, V.N.; Neselevska, L.V.; Gorbulik, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    In the work the results of investigations of developed and produced solar cells (SC) and modules (SM) characteristics are presented. It has been shown that due to application of hydrogen plasma treatment and deposition of ...
  • Increase of planar homogeneity of multi-silicon structures by gettering treatments 
    Litovchenko, V.G.; Efremov, A.A.; Evtukh, A.A.; Rassamakin, Yu.V.; Klyui, M.I.; Kostylov, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Two types of gettering treatments are considered and compared from the viewpoint of their usefulness to decrease LD scatter over the wafer in multi-silicon photovoltaic structures. It was found that in both cases high ...
  • Instability of homogeneous composition of highly strained quantum wells in heterostructures GaAs/InxGa₁₋xAs/GaAs 
    Klimovskaya, A.I.; Grigor’ev, N.N.; Gule, E.G.; Dryha, Yu.A.; Litovchenko, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    InxGa₁-xAs QW-layers embedded in GaAs matrix have been characterized by photoluminescence (PL). The relation between the PL parameters and mismatch of the lattice parameters of the layer and matrix was established. In ...
  • Investigations of impurity gettering in multicrystalline silicon 
    Evtukh, A.A.; Litovchenko, V.G.; Oberemok, A.S.; Popov, V.G.; Rassamakin, Yu.V.; Romanyuk, B.N.; Volkov, S.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The processes of gettering the recombination-active impurities in multicrystalline silicon were investigated using methods of mass spectrometry of neutral atoms with the depth profile analysis and spectroscopy of a surface ...
  • Models of the adsorbtion-catalytic centers on transition metals 
    Litovchenko, V.G. (Condensed Matter Physics, 1998)
    The models of adsorbo-catalitic centers for transition metals, which use the peculiarities of the electron-orbital structures as insulated and bounded atoms, have been analized. The important role of the unfilled ...
  • Optical properties of diamond-like carbon films subjected to ultraviolet irradiation 
    Klyui, N.I.; Litovchenko, V.G.; Lukyanov, A.N.; Klyui, A.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    Influence of UV irradiation on optical properties of the nitrogen doped diamond-like carbon (DLC) films was studied. Transparency spectra of the initial, UV irradiated and concentrated UV irradiated films were measured. ...
  • The enhanced catalytic dissociation of adsorbed hydrogen containing molecules 
    Litovchenko, V.G.; Efremov, A.A. (Condensed Matter Physics, 1999)
    Some general conceptions and mechanisms of dissociative adsorption and catalysis are analyzed. The role of such factors as electronic shell configurations of isolated atoms, crystalline structure of the surface, local ...
  • The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers 
    Solntsev, V.S.; Gorbanyuk, T.I.; Litovchenko, V.G.; Evtukh, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    The adsorboelectric effect arising in multilayered semiconductor structures based on the porous Si with catalytically active Pd electrodes due to action of low concentrations of hydrogen containing gases (Н₂, H₂S) at the ...
  • The study of solar cells with back side contacts at low illumination 
    Gorban, A.P.; Kostylyov, V.P.; Litovchenko, V.G.; Sachenko, A.V.; Serba, A.A.; Sokolovskyi, I.O.; Chernenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Theoretical analysis and experimental research of Si solar cells (SC) with interdigitated back side contacts (BSC) photovoltaic parameters and photoconversion efficiency at low light level have been done in presence of ...